IKW50N65H5FKSA1
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Description:
IGBT 650V 50A 1,65V TO247-3
Supplier:
INFINEON
Matchcode:
IKW50N65H5
Rutronik No.:
IGBT2282
Unit Pack:
30
MOQ:
30
package:
TO-247-3
Packaging:
TUBE
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- V(CE)
- 650 V
- I(C)
- 50 A
- V(CEsat)
- 1.65 V
- Package
- TO-247-3
- Bodydiode
- YES
- P(tot)
- 16.7 W
- Automotive
- NO
- t(r)
- 7 nS
- td(off)
- 180 nS
- td(on)
- 21 nS
- Mounting
- THT
- RoHS Status
- RoHS-conform
- Technology
- Trench
- Packaging
- TUBE
- Supplier Part
- SP001001734
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 21 weeks
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
Summary of Features
- 650V breakthrough voltage
- Compared to Infineon’s best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Co-packed with Infineon’s new Rapid Si-diode technology
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
Benefits
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
Target Applications
- Uninterruptible Power Supplies
- Welding
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