IGW75N65H5XKSA1

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Description: IGBT 650V 75A 1.65V TO247-3 Supplier: INFINEON Matchcode: IGW75N65H5 Rutronik No.: IGBT1950 Unit Pack: 30 MOQ: 240 package: TO247-3 Packaging: TUBE

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Parameter

V(CE): 650 V
I(C): 75 A
V(CEsat): 1,65 V
Package: TO247-3
Bodydiode: NO
P(tot): 198 W
Automotive: NO
t(r): 33 nS
td(off): 174 nS
td(on): 28 nS
Mounting: THT
RoHS Status: RoHS-conform
Technology: HighSpeed
Packaging: TUBE

Supplier Part: SP001257936
ECCN: EAR99
Customs Tariff No.: 85412900000
Country: Germany
ABC-Code: C
Supplier Lead time: 21 weeks

Description

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. Summary of Features

650V breakthrough voltage
Compared to Infineon’s Best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f

Benefits

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design

Target Applications