A4G16QA8BVWEMO

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Description: SO-DIMM DDR4 16GB MICRON Supplier: ATP Matchcode: A4G16QA8BVWEMO Rutronik No.: DISMOD1968 Unit Pack: 1 MOQ: 1 Packaging: TRAY

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Parameter

Capacity: 16GB
Temp.max.: 85°C
Layout: SO-DIMM
Temp.min.: 0°C
Clockfrequency: 3200 MHZ
ECC: NO
Voltage: 1.2
Pins: 260
Registered: NO
Automotive: NO
RoHS Status: RoHS-conform
Packaging: TRAY

ECCN: EAR99
Customs Tariff No.: 84733020000
Country: Taiwan
Supplier Lead time: 6 weeks

Description

Rutronik Approved Compatibility (MemTest86)

Boards:

+ DISBOA3162 (Validated by Rutronik)

+ DISBOA3246 (Validated by Rutronik)

Please contact PM Richard Klauser for MemTest86 Pro Certificate.

ATP's fourth-generation industrial DDR memory combines up to 3200 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies.

As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic.

DDR4-3200 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400 MT/s to 3200 MT/s amplifies theoretical peak performance by 20% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs.

Features:

Density: 2 GB to 128 GB
Increased performance and bandwidth (up to 3200 MT/s)
Decreased voltage for better power consumption
Provides better reliability, availability and serviceability (RAS) and improves data integrity