IPW65R080CFDAFKSA1
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Description:
N-CH 650V 43,3A 80mOhm TO247
Supplier:
INFINEON
Matchcode:
IPW65R080CFDA
Rutronik No.:
TMOS1734
Unit Pack:
30
MOQ:
30
package:
TO-247
Packaging:
TUBE
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- Configuration
- N-CH
- V(DS)
- 650 V
- I(D)at Tc=25°C
- 43.3 A
- RDS(on)at 10V
- 80 mOhm
- Q(g)
- 161 nC
- P(tot)
- 391 W
- R(thJC)
- 0.32 K/W
- Logic level
- NO
- Mounting
- THT
- Technology
- CoolMOS
- Fast bodydiode
- YES
- Automotive
- AEC-Q(101)
- Package
- TO-247
- RoHS Status
- RoHS-conform
- Packaging
- TUBE
- Supplier Part
- SP000875806
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- A
- Supplier Lead time
- 19 weeks
650V CoolMOS™ CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series provides now also an integrated fast body diode.
Summary of Features
- First 650V automotive qualified technology with integrated fast body diode on the market
- Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
- Low gate charge value Q g
- Low Q rr at repetitive commutation on body diode & lowQ oss
- Reduced turn on and turn of delay times
- Compliant to AEC Q101 standard
Benefits
- Increased safety margin due to higher breakdown voltage
- Reduced EMI appearance and easy to design in
- Better light load efficiency
- Lower switching losses
- Higher switching frequency and/or higher duty cycle possible
- High quality and reliability
Target Applications
- Unidirectional and bidirectional DC-DC converter
- Battery charger
- HID lighting
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