IPD60R600E6ATMA1

image shown is a representation only

Description: N-CH 600V 7,3A 600mOhm TO252-3 Supplier: INFINEON Matchcode: IPD60R600E6 Rutronik No.: TMOSP10330 Unit Pack: 2500 MOQ: 2500 package: DPAK Packaging: REEL

Find Alternatives

Datasheet Add to Project Samples

Download the free Library Loader to convert this file for your ECAD Tool

Parameter

Configuration: N-CH
V(DS): 600 V
I(D)at Tc=25°C: 7.3 A
RDS(on)at 10V: 600 mOhm
Q(g): 20.5 nC
P(tot): 63 W
R(thJC): 2 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOS E6
Fast bodydiode: NO
Automotive: NO
Package: DPAK
RoHS Status: RoHS-conform
Packaging: REEL

Supplier Part: SP001117094
ECCN: EAR99
Customs Tariff No.: 85412900000
Country: Malaysia
ABC-Code: C
Supplier Lead time: 17 weeks

Description

CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Summary of Features

Easy control of switching behavior
Very high commutation ruggedness
Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss)
Easy to use
Better light load efficiency compared to C3
Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
Better price performance in comparison to previous CoolMOS™ generations
More efficient, more compact, lighter and cooler