IDD08SG60CXTMA2
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Description:
S-Diode 600V 8A 2.2V PG-TO252-3
Supplier:
INFINEON
Matchcode:
IDD08SG60C
Rutronik No.:
DSKY5195
Unit Pack:
2500
MOQ:
2500
package:
DPAK
Packaging:
REEL
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- V(RRM)
- 600 V
- I(F)per diode
- 8 A
- I(FSM)
- 35 A
- V(F)
- 2.2 V
- Technology
- 3thinQ!SiC
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Configuration
- SINGLE
- Mounting
- SMT
- T(j) max
- 175 °C
- Supplier Part
- SP001632510
- ECCN
- EAR99
- Customs Tariff No.
- 85411000000
- Country
- Malaysia
- ABC-Code
- A
- Supplier Lead time
- 19 weeks
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.
Summary of Features
- Benchmark switching behavior
- No reverse recovery charge
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
Benefits
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Target Applications
- Server
- Telecom
- Solar
- Lighting
- PC power
- AC-DC
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