1EDI30I12MFXUMA1
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Description:
1xGATE-DRV 1200V 6,2A DSO-8
Supplier:
INFINEON
Matchcode:
1EDI30I12MF
Rutronik No.:
ICGDRV1495
Unit Pack:
2500
MOQ:
2500
package:
DSO-8
Packaging:
REEL
Datasheet
Add to Project
Samples
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- Channels
- 1
- Mounting
- SMD
- T(j,min)
- -40 °C
- T(j,max)
- 150 °C
- Automotive
- NO
- Package
- DSO-8
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001037232
- ECCN
- EAR99
- Customs Tariff No.
- 85423190000
- Country
- China
- Supplier Lead time
- 22 weeks
EiceDRIVER™ Compact single-channel isolated gate driver with 5.9/6.2 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance for IGBTs, MOSFETs and SiC MOSFETs.1EDI30I12MF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-MF family). 1EDI30I12MF offers active Miller clamp, 240 ns input filter, accurate and stable timing.
Summary of Features
- EiceDRIVER™ Compact single channel isolated gate driver family
- For 600 V, 650 V, 1200 V IGBTs, SiC and Si MOSFETs
- Galvanically isolated coreless transformer gate driver
- 6.2 A typical sinking and sourcing peak output current
- 20 V absolute maximum output supply voltage
- 300 ns propagation delay with 240 ns input filter
- High common-mode transient immunity CMTI >100 kV/μs
- Active Miller clamp
- Short-circuit clamping and active shutdown
- DSO-8 150 mil narrow-body package with 4 mm creepage distance
- 10.5 V/12.7 V undervoltage lockout (UVLO) protection with hysteresis
Benefits
- Active Miller clamp to prevent parasitic turn on, ideal for driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7
- Integrated filters reduce the need of external filters
- Wide input voltage operating range
- Suitable for operation at high ambient temperature and in fast switching applications
- No need to adapt signal voltage levels between μController and driver
- Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
- Short-circuit clamping to limit the gate voltage during short circuit
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